This circuit demonstrates how a reverse biased silicon diode can be used as a makeshift temperature sensor.

Note: If you can't find a 1 MOhm variable resistor or potentiometer simply try different fixed resistors, ranging from 1MOhm to 470K, 220K, etc.
The diode, when reverse biased, will present a certain leakage current that happens to be proportional to the junction temperature. This little current needs to be amplified, so we cascade three transistors in darlington configuration for maximum gain. The variable resistor allows us to set the overall “sensitivity” of the circuit. Without the transistors this small amount of current would be useless for us.
The small 10nF capacitor helps us obtain a certain hysteresis in the circuit, it may be removed if it’s effect is undesired.
A simple variation of this circuit would allow an LED bargraph display to indicate the temperature level. To achieve this we must create a voltage drop for each output LED, we can do this with regular silicon diodes. Then each LED would be driven by an NPN BJT with 1K base resistors.
Now, due to the high input impedance of this circuit you musn’t touch the sensor diode, likewise if you want to do remote sensing you must use a shielded cable. Failure to do so will introduce all sorts of noise into the base of the transistor rendering the circuit useless.
An even simpler version!
This version of the circuit involves only a 1n4148 diode, a high brightness LED and a resistor.

A few uAs of leakage will turn most high brightness LEDs on.
When you heat up the diode with a lighter, the leakage current is enough to turn on most modern LEDs producing visible light! — Of course, the temperatures required will most likely damage the diode in a very short period of time, however it’s one neat little experiment proving the concept at a bare minimum cost.
Hopefully you’ll be able to experiment with this circuit and come up with some useful variations!
Cheers.